Study of an asymmetry tunnel FET biosensor using junctionless heterostructure and dual material gate

Abstract In recent years, label-free sensors have been studied extensively for biomolecule detections. Label-free biosensors based on MOSFETs could achieve high detection sensitivity, the subthreshold swing of such cannot break limitation 60 mV Dec −1 due to physical mechanism thermal electron emission. However, less than can be achieved in tunnel FETs working band tunneling (BTBT) mode. Usually, a nanogap under gate electrode both MOSFET and FET (TFET), which electrically sense characteristics biomolecules by dielectric constant modulation effect. this article, we propose novel embedded modulated asymmetry biosensor with junctionless heterostructure dual material gate, where different detected effectively adjusting workfunctions electrodes. Influences auxiliary back sensitivities are explored. addition, device-level effects simulated considering neutral charged biomolecules. The influence at fixed charge density is also studied. Simulation results show that (ADMG-HJLTFET) provide higher switch ratio sensitivity.